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Affilication of Author(s):微电子学院
Type of Patent:发明
Application Number:201910342861.0
Number of Inventors:1
Service Invention or Not:no
Publication Date:2021-03-30
Authorization Date:2021-03-30
Pre One:一种多孔GaN导电DBR及其制备方法 授权号:ZL2019103428324 第一发明人