based selective etch for GaN Devices and applications thereof（国际发明专利）授权号：WO2011/094391A1 第一发明人
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Title:based selective etch for GaN Devices and applications thereof（国际发明专利）授权号：WO2011/094391A1 第一发明人
Service Invention or Not:No
Release Time:2022-11-10