Current position: Home >> Scientific Research >> Patents

Conductivity based selective etch for GaN Devices and applications thereof(国授权发明专利)授权号:US9206524B2 第一发明人

Hits:

Service Invention or Not:no

Pre One:一种热喷涂用可调式多路送粉架及喷涂设备

Next One:一种双向功能梯度涂层设计方法