Conductivity based selective etch for GaN Devices and applications thereof（国授权发明专利）授权号：US9206524B2 第一发明人
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Title:Conductivity based selective etch for GaN Devices and applications thereof（国授权发明专利）授权号：US9206524B2 第一发明人
Service Invention or Not:No
Release Time:2022-11-10