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Impacts of extra charges on trap level modulations at cSi/aSiO(2) interface: correlations to leakage current recovery in oxide dielectric
Affiliation of Author(s):信息科学与工程学院
Journal:Journal of Physics D: Applied Physics
First Author:马晓雷
Indexed by:Unit Twenty Basic Research
Document Code:4D70F8DB3D9A44A4BD78E480F829B2D4
Volume:53
Issue:24
Translation or Not:no
Date of Publication:2020-04-07