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Institution:信息科学与工程学院
Title of Paper:Impacts of extra charges on trap level modulations at cSi/aSiO(2) interface: correlations to leakage current recovery in oxide dielectric
Journal:Journal of Physics D: Applied Physics
First Author:马晓雷
Document Code:4D70F8DB3D9A44A4BD78E480F829B2D4
Volume:53
Issue:24
Number of Words:5
Translation or Not:No
Date of Publication:2020-04
Release Time:2021-06-01