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Optimal Read Voltages of Retention-after-Cycling in Triple-level-cell (TLC) 3D NAND Flash Memory and its High-precision Modeling Method
Affiliation of Author(s):信息科学与工程学院
First Author:林宏哲
Document Code:8DFAC7AFCB594B8281288447982CE64A
Number of Words:3
Translation or Not:no
Date of Publication:2022-06-11