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Institution:信息科学与工程学院
Title of Paper:Impacts of Poly-Si Channel on Cell Variations in Vertical Scaled Charge-Trap (CT) 3D NAND Flash Memory
Journal:IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
First Author:王菲
Document Code:1402446227466883073
Number of Words:3
Translation or Not:No
Date of Publication:2020-11
Release Time:2023-05-18