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Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory
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Affiliation of Author(s):信息科学与工程学院
Key Words:3D NAND flash;operation intervals;program disturb;lateral charge migration
First Author:方晓彤
Document Code:1478212210961420289
Number of Words:3
Translation or Not:no
Date of Publication:2021-04-08
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