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Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance
Affiliation of Author(s):信息科学与工程学院
Journal:IEEE Transactions on Electron Devices
First Author:桑鹏鹏
Document Code:D0A984E5782B41B8B74E42B88F33D2F8
Issue:69
Number of Words:3
Translation or Not:no
Date of Publication:2022-04-01