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Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case
Affiliation of Author(s):信息科学与工程学院
Journal:IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Key Words:Ferroelectric synapse;Interconnect resistance;Neurological system;Residual polarization
First Author:Tang, Mingfeng
Document Code:1523585871578664961
Volume:10
Page Number:192-196
Number of Words:2
Translation or Not:no
Date of Publication:2022-01-01