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Insights of V G-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors
Affiliation of Author(s):信息科学与工程学院
Journal:SCIENCE CHINA-Information Sciences
First Author:詹学鹏
Document Code:1583418538210992130
Volume:65
Issue:8
Page Number:297-298
Number of Words:1
Translation or Not:no
Date of Publication:2022-08-01