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Institution:信息科学与工程学院
Title of Paper:Silicon Atomic-Layer Doped Hf $_{\text{0.7}}$ Zr $_{\text{0.3}}$ O $_{\text{2}}$ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance ( ${>}\text{10}^{\text{12}}$ Cycles)
Journal:IEEE Transactions on Electron Devices
First Author:台路
Document Code:1806576807300517889
Page Number:1-4
Number of Words:3
Translation or Not:No
Date of Publication:2024-01
Release Time:2025-10-02