詹学鹏
个人信息Personal Information
教授 硕士生导师
性别:男
毕业院校:吉林大学
学历:研究生(博士后)
学位:博士生
在职信息:在职
所在单位:信息科学与工程学院
入职时间:2019-07-01
电子邮箱:zhanxuepeng@sdu.edu.cn
扫描关注
- [21] 贾梦华. Optimal Program-Read Schemes Towards Highly Reliable Open Block Operations in 3D Charge-trap NAND Flash Memory. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2022.
- [22] 赵国庆. Design-Technology Co-optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET based Neuromorphic Computing. IEEE Transactions on Nanotechnology, 2022.
- [23] 唐鸣丰. Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing. IEEE Transactions on Electron Devices, 2023.
- [24] 王成城. Complementary Digital and Analog Resistive Switching Based on AlOx Monolayer Memristors for Mixed-Precision Neuromorphic Computing. IEEE Transactions on Electron Devices, 2023.
- [25] 冯扬. Fully Flash-based Reservoir Computing Network with Low Power and Rich States. IEEE Transactions on Electron Devices, 2023.
- [26] 吴书昊. Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. MICROELECTRONICS JOURNAL, 2023.
- [27] 齐悦冉. An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory. MICROMACHINES, 2023.
- [28] 魏巍. Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2. JOURNAL OF APPLIED PHYSICS, 131, 2022.
- [29] Tang, Mingfeng. A Compact Fully Ferroelectric FETs Reservoir Computing Network with Sub-100ns Operating Speed. IEEE Electron Device Letters, 2022.
- [30] 秦琦. TID Radiation Impacts on Charge-trapping Macaroni 3D NAND Flash Memory. 2020-July, 2020.
- [31] 马晓雷. Charge-assisted Recovery and Degradation in Charge-trapping 3D NAND Flash Memory, Experimental Evidences and Theoretical Perspectives. 41-42, 2020.
- [32] 李元鹏. A Novel quasi-SLC(qSLC) Program/Erase Scheme in Ultra-Densified Charge-trapping 3D NAND Flash Memory to Enhance System Level Performance. 45-46, 2020.
- [33] 方晓彤. Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory. 2021.
- [34] . Deep insights into the failure mechanisms in field-cycled ferroelectric Hf0.5Zr0.5O2Thin Film: TDDB characterizations and first-principles calculations. 2020-December, 39.6.1-39.6.4, 2020.
- [35] 王菲. Impacts of Poly-Si Channel on Cell Variations in Vertical Scaled Charge-Trap (CT) 3D NAND Flash Memory. 2020.
- [36] 孔亚晨. Comprehensive investigations on data pattern dependences in charge-Trap (ct) 3d nand flash memory. 2020.
- [37] 彭学阳. Impacts of Lateral Charge Migration on Data Retention and Read Disturb in 3D Charge-Trap NAND Flash Memory. 2020.
- [38] 陈冰璐. High-to-Low Flippling (HLF) Coding Strategy in Triple-levell-cell (TLC) 3D NAND Flash Memory to Construct? Reliable Image Storages. 2022.
- [39] 席义方. Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security. 2021.
- [40] 赵国庆. Suppressing Interfacial Layer Degradation in Hf0.5Zr0.5O2-based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling. 2022.