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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：吉林大学
学历：研究生(博士后)
学位：博士生
在职信息：在职
所在单位：信息科学与工程学院
入职时间：2019-07-01
电子邮箱：zhanxuepeng@sdu.edu.cn
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- [42] 王成城. Complementary Digital and Analog Resistive Switching Based on AlOx Monolayer Memristors for Mixed-Precision Neuromorphic Computing. IEEE Transactions on Electron Devices, 2023.
- [43] 冯扬. Fully Flash-based Reservoir Computing Network with Low Power and Rich States. IEEE Transactions on Electron Devices, 2023.
- [44] 吴书昊. Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. MICROELECTRONICS JOURNAL, 2023.
- [45] 齐悦冉. An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory. MICROMACHINES, 2023.
- [46] 魏巍. Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2. JOURNAL OF APPLIED PHYSICS, 131, 2022.
- [47] Tang, Mingfeng. A Compact Fully Ferroelectric FETs Reservoir Computing Network with Sub-100ns Operating Speed. IEEE Electron Device Letters, 2022.
- [48] 秦琦. TID Radiation Impacts on Charge-trapping Macaroni 3D NAND Flash Memory. 2020-July, 2020.
- [49] 马晓雷. Charge-assisted Recovery and Degradation in Charge-trapping 3D NAND Flash Memory, Experimental Evidences and Theoretical Perspectives. 41-42, 2020.
- [50] 李元鹏. A Novel quasi-SLC(qSLC) Program/Erase Scheme in Ultra-Densified Charge-trapping 3D NAND Flash Memory to Enhance System Level Performance. 45-46, 2020.
- [51] 方晓彤. Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory. 2021.
- [52] . Deep insights into the failure mechanisms in field-cycled ferroelectric Hf0.5Zr0.5O2Thin Film: TDDB characterizations and first-principles calculations. 2020-December, 39.6.1-39.6.4, 2020.
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- [54] 孔亚晨. Comprehensive investigations on data pattern dependences in charge-Trap (ct) 3d nand flash memory. 2020.
- [55] 彭学阳. Impacts of Lateral Charge Migration on Data Retention and Read Disturb in 3D Charge-Trap NAND Flash Memory. 2020.
- [56] 陈冰璐. High-to-Low Flippling (HLF) Coding Strategy in Triple-levell-cell (TLC) 3D NAND Flash Memory to Construct？ Reliable Image Storages. 2022.
- [57] 席义方. Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security. 2021.
- [58] 赵国庆. Suppressing Interfacial Layer Degradation in Hf0.5Zr0.5O2-based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling. 2022.
- [59] 林宏哲. Optimal Read Voltages of Retention-after-Cycling in Triple-level-cell (TLC) 3D NAND Flash Memory and its High-precision Modeling Method. 2022.
- [60] 金琦. Variations of Bias Dependent Timing Constants and Its Implication on Trap Positions and Energy Levels by the Hidden Markov Model. 13-14, 2021.