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Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode
Release Time:2024-09-15| Hits:
Institution:新一代半导体材料研究院
Title of Paper:Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode
Journal:IEEE Electron Device Letters
First Author:王新宇
Document Code:1806576903362662402
Number of Words:3
Translation or Not:No
Date of Publication:2024-08
Release Time:2024-09-15
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