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Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Release Time:2025-05-24| Hits:
Institution:新一代半导体材料研究院
Title of Paper:Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Journal:Results in Physics
First Author:Wang, Xinyu
Document Code:36B4649A237D476EA6CEB102D291C92E
Issue:62 (2024) 107799
Page Number:1
Number of Words:5000
Translation or Not:No
Date of Publication:2024-07
Release Time:2025-05-24
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