Paper Publications
Impacts of silicon carbide defects on electrical characteristics of SiC devices
Release Time:2025-02-25| Hits:
Institution:新一代半导体材料研究院
Title of Paper:Impacts of silicon carbide defects on electrical characteristics of SiC devices
Journal:JOURNAL OF APPLIED PHYSICS
First Author:来玲玲
Document Code:D5742555117F4661AA6914F43C395CBC
Issue:060701
Page Number:1
Number of Words:5000
Translation or Not:No
Date of Publication:2025-02
Release Time:2025-02-25
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University