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Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination
Release Time:2025-05-16| Hits:
Institution:新一代半导体材料研究院
Title of Paper:Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination
Journal:MICROELECTRONICS JOURNAL
First Author:王新宇
Document Code:B553EB6CF2E14F2F938DCAF7AB87DCE3
Issue:161
Page Number:106732
Number of Words:5000
Translation or Not:No
Date of Publication:2025-05
Release Time:2025-05-16
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