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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

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Institution:新一代半导体材料研究院

Title of Paper:Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

Journal:Journal of Physics and Chemistry of Solids

First Author:罗鑫

Document Code:1747462737015623682

Volume:187

Number of Words:4000

Translation or Not:No

Date of Publication:2024-04

Release Time:2024-05-17

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