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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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Current position: Home >> Scientific Research >> Paper Publications

Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

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Affiliation of Author(s):新一代半导体材料研究院

Journal:Journal of Physics and Chemistry of Solids

First Author:罗鑫

Document Code:1747462737015623682

Volume:187

Number of Words:4000

Translation or Not:no

Date of Publication:2024-04-01

 

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