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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

Hits: Praise

Affiliation of Author(s):新一代半导体材料研究院

Journal:Solid-State Electronics

First Author:陈思衡

Document Code:1754450306790084609

Volume:213

Number of Words:4000

Translation or Not:no

Date of Publication:2024-03-01