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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

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Affiliation of Author(s):新一代半导体材料研究院

Journal:IEEE Electron Device Letters

First Author:陈思衡

Document Code:CFFF4E6B36CF438F85A95FA554A9E105

Volume:12

Issue:45

Page Number:2343

Number of Words:3000

Translation or Not:no

Date of Publication:2024-12-01

 

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