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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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Current position: Home >> Scientific Research >> Paper Publications

Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

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Affiliation of Author(s):新一代半导体材料研究院

Journal:APPLIED PHYSICS LETTERS

First Author:罗鑫

Document Code:1843556233512062977

Volume:125

Issue:12

Number of Words:4000

Translation or Not:no

Date of Publication:2024-09-16

 

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