山东大学教师主页 Handoko LINEWIH Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer Home

Handoko LINEWIH

Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials

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Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

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Institution:新一代半导体材料研究院

Title of Paper:Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

Journal:APPLIED PHYSICS LETTERS

First Author:罗鑫

Document Code:1843556233512062977

Volume:125

Issue:12

Number of Words:4000

Translation or Not:No

Date of Publication:2024-09

Release Time:2024-12-09

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