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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test

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Institution:新一代半导体材料研究院

Title of Paper:Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test

Journal:2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

First Author:曾繁朋

Document Code:269EBC8BD4C5473D8AA0C7CCC9FFB067

Number of Words:5000

Translation or Not:No

Date of Publication:2024-11

Release Time:2025-03-04

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