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Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test
Affiliation of Author(s):新一代半导体材料研究院
First Author:曾繁朋
Document Code:269EBC8BD4C5473D8AA0C7CCC9FFB067
Number of Words:5000
Translation or Not:no
Date of Publication:2024-11-18