山东大学教师主页 Handoko LINEWIH A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage Home

Handoko LINEWIH

Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials

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A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage

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Institution:新一代半导体材料研究院

Title of Paper:A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage

Journal:MICROELECTRONICS RELIABILITY

First Author:曾繁朋

Document Code:1904D09074C44E0291C78B6CC255088B

Volume:168

Issue:115674

Page Number:1

Number of Words:6000

Translation or Not:No

Date of Publication:2025-03

Release Time:2025-05-10

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