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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage

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Affiliation of Author(s):新一代半导体材料研究院

Journal:MICROELECTRONICS RELIABILITY

First Author:曾繁朋

Document Code:1904D09074C44E0291C78B6CC255088B

Issue:168

Page Number:1

Number of Words:6000

Translation or Not:no

Date of Publication:2025-03-06

 

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