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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法

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Title:一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202311157957.2

Number of Inventors:4

Service Invention or Not:No

Application Date:2023-09-08

Publication Date:2024-04-05

Authorization Date:2024-04-05

Release Time:2024-04-16

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