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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Current position: Home >> Scientific Research >> Patents
一种增强型GaN HEMT器件结构和制造方法

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Title:一种增强型GaN HEMT器件结构和制造方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202410508321.6

Number of Inventors:4

Service Invention or Not:No

Application Date:2024-04-26

Publication Date:2024-07-09

Authorization Date:2024-07-09

Release Time:2024-07-11

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