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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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基于In组分调控InGaN的增强型GaN功率器件

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Title:基于In组分调控InGaN的增强型GaN功率器件

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202410508307.6

Number of Inventors:4

Service Invention or Not:No

Application Date:2024-04-26

Publication Date:2024-07-12

Authorization Date:2024-07-12

Release Time:2024-07-16

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