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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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JV8vbQ1VxnyWDFFBkdq2JbHYfPejQ6S8FDMBjOx5L8Ob0F2IcHsaZcSutvIc
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一种碳化硅器件双层金属的刻蚀方法

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Title:一种碳化硅器件双层金属的刻蚀方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202311623560.8

Number of Inventors:3

Service Invention or Not:No

Application Date:2023-11-30

Publication Date:2024-08-02

Authorization Date:2024-08-02

Release Time:2024-08-22