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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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一种SiC器件欧姆接触及其制备方法和应用

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Title:一种SiC器件欧姆接触及其制备方法和应用

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202310696789.8

Number of Inventors:8

Service Invention or Not:No

Application Date:2023-06-13

Publication Date:2025-02-11

Authorization Date:2025-02-11

Release Time:2025-02-21

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