Qr code
中文
Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
MOBILE Version
Click:Times

The Last Update Time: ..

jdF4xj2UWoGRt5gH81CnYe9JkXUCnqk7bhTPvdGoEuh9uZbZoXOUv4cA7TIK
Current position: Home >> Scientific Research >> Patents
测量SiC MOSFET沟道近界面陷阱密度的方法

Hits:

Title:测量SiC MOSFET沟道近界面陷阱密度的方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202411603552.1

Number of Inventors:5

Service Invention or Not:No

Application Date:2024-11-12

Publication Date:2025-03-07

Authorization Date:2025-03-07

Release Time:2025-06-12

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University