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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
College: Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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Current position: Home >> Scientific Research >> Patents
测量SiC MOSFET沟道近界面陷阱密度的方法

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Title:测量SiC MOSFET沟道近界面陷阱密度的方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202411603552.1

Number of Inventors:5

Service Invention or Not:No

Application Date:2024-11-12

Publication Date:2025-03-07

Authorization Date:2025-03-07

Release Time:2025-06-12

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