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Handoko LINEWIH


Gender:Male
School/Department:新一代半导体材料研究院
Date of Employment:2023-02-20
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Current position: Home >> Scientific Research >> Patents

测量SiC MOSFET沟道近界面陷阱密度的方法

Hits: Praise

Affilication of Author(s):新一代半导体材料研究院

Type of Patent:发明

Application Number:202411603552.1

Number of Inventors:5

Service Invention or Not:no

Application Date:2024-11-12

Publication Date:2025-03-07

Authorization Date:2025-03-07

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