Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode
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发表刊物：Compound Semiconductor Week (CSW), Boston, USA, May 29 - June 1
全部作者：Riyaz Abdul Khadar
通讯作者：Chao Liu,Elison Matioli
是否译文：否
发表时间：2018-05-01
发表时间：2018-05-01