High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes
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发表刊物：Materials
关键字：Te-enhanced; GaN; straddling band; ultraviolet photodetectors
摘要：Photodetectors (PDs) based on two-dimensional (2D) materials have promising applications in modern electronics and optoelectronics. However, due to the intralayer recombination of the photogenerated carriers and the inevitable surface trapping stages of the constituent layers, the PDs based on 2D materials usually suffer from low responsivity and poor response speed. In this work, a distinguished GaN-based photodetector is constructed on a sapphire substrate with Te/metal electrodes. Due to the metal-like properties of tellurium, the band bending at the interface between Te and GaN generates an inherent electric field, which greatly reduces the carrier transport barrier and promotes the photoresponse of GaN. This Te-enhanced GaN-based PD show a promising responsivity of 4951 mA/W, detectivity of 1.79 × 1014 Jones, and an external quantum efficiency of 169%. In addition, owing to the collection efficiency of carriers by this Te–GaN interface, the response time is greatly decreased compared with pure GaN PDs. This high performance can be attributed to the fact that Te reduces the contact resistance of the metal electrode Au/Ti to GaN, forming an ohmic-like contact and promoting the photoresponse of GaN. This work greatly extends the application potential of GaN in the field of high-performance photodetectors and puts forward a new way of developing high performance photodetectors.
全部作者：Tingjun Lin,Wenliang Wang,Chao Liu
第一作者：Sheng Lin
论文类型：期刊论文
通讯作者：Yao Ding
卷号：16
期号：13
页面范围：4569
是否译文：否
发表时间：2023-06-01
收录刊物：SCI
发表时间：2023-06-01
附件：High Performance GaN-Based Ultraviolet Photodetector via Te Metal Electrodes.pdf 下载[] 次