Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
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发表刊物:Journal of Physics D: Applied Physics
全部作者:Jie Zhang,Tzu-Yi Yang,Hang Chen,Haochen Zhao,Guangyang Lin,Lincheng Wei,John Q. Xiao,Yu-Lun Chueh
第一作者:Peng Cui
论文类型:期刊论文
通讯作者:Yuping Zeng
卷号:53
期号:6
页面范围:065103
是否译文:否
发表时间:2019-12-01
收录刊物:SCI
发表时间:2019-12-01