论文成果
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
  • 发表刊物:
    Scientific reports
  • 全部作者:
    Jianghui Mo,Chen Fu,Yuanjie Lv,Huan Liu,Aijie Cheng,Chongbiao Luan,Yang Zhou,Gang Dai
  • 第一作者:
    Peng Cui
  • 通讯作者:
    Zhaojun Lin
  • 卷号:
    8
  • 页面范围:
    9036
  • 是否译文:
  • 发表时间:
    2018-06-01
  • 收录刊物:
    SCI

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