论文成果
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
  • 发表刊物:
    Applied physics A-Materials Science & Processing
  • 全部作者:
    Zhaojun Lin,Chen Fu,Yan Liu,Yuanjie Lv
  • 第一作者:
    Peng Cui
  • 卷号:
    123
  • 页面范围:
    359
  • 是否译文:
  • 发表时间:
    2018-04-01
  • 收录刊物:
    SCI

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