Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
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发表刊物:IEEE Transactions on Electron Devices
全部作者:Huan Liu,Wei Lin,Aijie Cheng,Ming Yang,Yan Liu,Chen Fu,Yuanjie Lv,Chongbiao Luan
第一作者:Peng Cui
通讯作者:Zhaojun Lin
卷号:64
期号:3
页面范围:1038
是否译文:否
发表时间:2017-03-01
收录刊物:SCI
发表时间:2017-03-01