Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
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发表刊物:Superlattices and Microstructures
全部作者:Peng Cui,Yan Liu,Chen Fu,Yuanjie Lv,Zhihong Feng,Chongbiao Luan
第一作者:Huan Liu
论文类型:期刊论文
通讯作者:Aijie Cheng,Zhaojun Lin
卷号:103
页面范围:113
是否译文:否
发表时间:2017-01-01
收录刊物:SCI
发表时间:2017-01-01