Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
发表刊物：
IEEE Transactions on Electron Devices
全部作者：
Yuanjie Lv,Zhihong Feng,Wei Lin,Peng Cui,Yan Liu,Chen Fu
