Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors
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发表刊物:Journal of Applied Physics
全部作者:Yuanjie Lv,Zhihong Feng,Wei Lin,Peng Cui,Yan Liu,Chen Fu
第一作者:Ming Yang
论文类型:期刊论文
通讯作者:Zhaojun Lin
卷号:119
页面范围:224501
是否译文:否
发表时间:2016-06-01
收录刊物:SCI
发表时间:2016-06-01
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