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    Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode

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    • Institution:新一代半导体材料研究院

    • Title of Paper:Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode

    • Journal:物理结果

    • First Author:Wang, Xinyu

    • Document Code:1806576901185818626

    • Volume:62

    • Number of Words:5000

    • Translation or Not:No

    • Date of Publication:2024-07

    • Release Time:2025-01-15
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