Home > Scientific Research > Paper Publications

Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode

Hits:：

Institution:新一代半导体材料研究院
Title of Paper:Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode
Journal:2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
First Author:王新宇
Document Code:99EBB9F885AB4FE0A19772F7E975E724
Translation or Not:No
Date of Publication:2024-11
Release Time:2025-03-04

Pre One：Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

Next One：Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode