中文

Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode

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  • Affiliation of Author(s):新一代半导体材料研究院

  • First Author:王新宇

  • Document Code:99EBB9F885AB4FE0A19772F7E975E724

  • Translation or Not:no

  • Date of Publication:2024-11-18

  • Date of Publication:2024-11-18

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