山东大学教师主页胡小波 Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method 中文主页

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Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method

所属单位：新一代半导体材料研究院

论文名称：Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method

发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS

第一作者：王兴龙

论文编号：1945405047454982145

卷号：1036

字数：3000

是否译文：否

发表时间：2025-06

发布时间：2025-10-01

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