胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[1] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2024.
[2] 崔潆心. Threading dislocation classification for 4H-SiC substrates using the KOH etching method. CrystEngComm, 978, 2018.
[3] 王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.
[4] 王新宇. Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode. 2024.
[5] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. 物理结果, 62, 2024.
[6] 李华东. Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals. Physica Script, 2024.
[7] 仲光磊. SiC 单晶生长初期表面台阶及微管特性. 硅酸盐学报, 2022.
[8] 沙慧茹. 砷化镓光导开关的损伤形貌研究. 《强激光与粒子束》, 34, 1-6, 2022.
[9] 王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.
[10] 邵宏宇. Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates. Journal of Electronic Materials , 2024.
[11] 胡国杰. Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field. VACUUM, 222, 2024.
[12] 胡国杰. Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth. 140-142, 2023.
[13] 熊希希. 低位错密度8英寸导电型碳化硅单晶衬底制备. Journal of Inorganic Materials, 1-2, 2023.
[14] 田佳奇. Origins and characterization techniques of stress in SiC crystals: A review. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2024.
[15] 王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth. JOURNAL OF MATERIALS SCIENCE Journal, 2024.

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