山东大学教师主页胡小波论文成果中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院（晶体材料全国重点实验室）

教师姓名：胡小波
入职时间：1997-09
所在单位：晶体材料研究院（晶体材料全国重点实验室）
性别：男
职称：教授
所属院系：晶体材料研究院

论文成果

[1] 李斌. 单晶金刚石声子非简谐衰减效应研究. 《人工晶体学报》, 52, 442-451, 2023.
[2] 陈可睿. Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal. JOURNAL OF ALLOYS AND COMPOUNDS , 2025.
[3] 王江风. Decoding “black-white band” defects in PVT grown 4H-SiC and its suppression through thermal field optimization.pdf. Materials Science in Semiconductor Processing, 2025.
[4] 张宁. Numerical simulation of thick SiC crystal based on ring-shaped powder structure. Journal of crystal growth, 665, 2025.
[5] 王兴龙. Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method. JOURNAL OF ALLOYS AND COMPOUNDS , 1036, 2025.
[6] 陈可睿. Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal. JOURNAL OF ALLOYS AND COMPOUNDS , 1040, 2025.
[7] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2024.
[8] 崔潆心. Threading dislocation classification for 4H-SiC substrates using the KOH etching method. CrystEngComm, 978, 2018.
[9] 王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.
[10] 王新宇. Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode. 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2024.
[11] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. 物理结果, 62, 2024.
[12] 李华东. Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals. PHYSICA SCRIPTA Journal, 2024.
[13] 仲光磊. SiC 单晶生长初期表面台阶及微管特性. 硅酸盐学报, 2022.
[14] 沙慧茹. 砷化镓光导开关的损伤形貌研究. 《强激光与粒子束》, 34, 1-6, 2022.
[15] 王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.

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