Paper Publications
- [25] 冀子武. Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths. Scientific Reports, 2017.
- [26] xumingsheng , Ji Ziwu , xuxiangang and 吕海燕. Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs. Materials Express, 7, 523, 2017.
- [27] Ji Ziwu , pangzhiyong , hanshenghao and weizhixian. Tetramer bis-(8-hydroxyquinoline) Zinc Crystals Prepared by Physical Vapor Deposition Method. Crystal Research and Technology, 52, 2017.
- [28] xumingsheng , Ji Ziwu , xuxiangang and 李建飞. W-shaped"" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substra. Optics Express, 25, 2017.
- [29] Ji Ziwu , pangzhiyong , xuxiangang , xumingsheng and 李建飞. Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs. Chinese Physics B, 26, 2017.
- [30] Ji Ziwu , WANG Xuelin , xuxiangang and 王强. Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs. Applied Surface Science, 410, 196, 2017.
- [31] hujifan , qinhongwei , zhou guangjun , Ji Ziwu and 谢继浩. Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature. scientific reports, 7, 2017.
- [32] Ji Ziwu , pangzhiyong , xuxiangang and 李建飞. Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 11, 184, 2017.
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