山东大学教师主页 LI Yuan On a Mott formalism for modeling oxide thin-film transistors Yuan Li

On a Mott formalism for modeling oxide thin-film transistors

Release Time:2024-09-25 Hits:

Institution:信息科学与工程学院
Journal:APPLIED PHYSICS LETTERS
First Author:伊光政
Document Code:3D0DCCE5AB5B460DA99251607B001C83
Volume:125
Issue:3
Number of Words:4000
Translation or Not:No
Date of Publication:2024-07

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On a Mott formalism for modeling oxide thin-film transistors