4sR1Iv05VFiT6PAH0fmgHnj2gn9h2rSrhPFMI32Zg10a2uEiPAPeHqrzGRc1
LI Yuan

Doctor

Postgraduate (Doctoral)

Shandong University

Recommended MA Supervisor

Personal Information

Gender:Male
Date of Employment:2017-12-26

VIEW MORE

Other Contact Information

Email :


Yuan Li > Scientific Research > Paper Publications

An Analytical Device Model for Vertical Channel-All-Around InGaZnO Thin-Film Transistors

Release Time:2025-09-29 Hits:

Institution:信息科学与工程学院
Journal:IEEE Transactions on Electron Devices
First Author:伊光政
Document Code:F377D439812142F399EBADF61FABE629
Volume:72
Issue:7
Page Number:3790
Number of Words:3
Translation or Not:No
Date of Publication:2025-05

Prev One:Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

Next One:Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect Transistors

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:  | The Last Update Time:..  | Login | SDU