高级实验师
硕士生导师
性别:女
毕业院校:山东大学
学历:研究生(博士)毕业
学位:博士
在职信息:在职
所在单位:集成电路学院
入职时间:2005-07-16
学科:微电子学与固体电子学
访问量:
最后更新时间:..
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[21]
栾彩娜.
Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates.
Materials letters,
2021.
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[22]
栾彩娜.
Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD.
JOURNAL OF ALLOYS AND COMPOUNDS ,
2018.
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[23]
栾彩娜.
Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD.
Crystal Research and Technology,
53,
2018.
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[24]
栾彩娜.
Structural, photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substrates.
CERAMICS INTERNATIONAL,
2019.
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[25]
栾彩娜.
UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition.
Materials Research Bulletin,
110488,
2019.
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[26]
栾彩娜.
CuInO2 epitaxial thin films on epi-GaN wafer: Fabrication and solar-blind photodetector.
APPLIED SURFACE SCIENCE,
154505,
2022.
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[27]
张彪.
Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates.
CERAMICS INTERNATIONAL Journal,
48,
4312,
2022.
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[28]
王迪.
Effect of epitaxial growth rate on morphological, structural and optical properties of beta-Ga2O3 films prepared by MOCVD.
Materials Research Bulletin,
149,
2022.
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[29]
栾彩娜.
Preparation and Characterization of High Mobility Nb-Doped SnO2 Transparent Conducting Films.
Materials Science Forum,
869,
2020.
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[30]
肖洪地.
Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example.
JOURNAL OF ALLOYS AND COMPOUNDS ,
162069,
2021.
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[31]
刘杰.
Eu-doped Lu2O3 epitaxial films with an embedded nanoporous GaN distributed Bragg reflectors.
CERAMICS INTERNATIONAL Journal,
47,
22693,
2021.
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[32]
乐永.
Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates.
MATERIALS LETTERS Journal,
302,
2021.
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[33]
栾彩娜.
Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD.
Journal of Materials Science: Materials in Electronics,
32,
21798,
2021.
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[34]
乐永.
Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates.
MATERIALS LETTERS Journal,
302,
2021.
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[35]
赵冲冲.
Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror.
VACUUM Journal,
182,
2020.
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[36]
王迪.
Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD.
CERAMICS INTERNATIONAL Journal,
46,
4568,
2020.
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[37]
何林安.
Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY Journal,
103,
2555,
2020.
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[38]
王迪.
Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates.
Journal of Materials Science: Materials in Electronics,
32,
2757,
2021.
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[39]
马瑾.
Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD.
Materials Research Bulletin,
47,
253,
2012.
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[40]
马瑾.
Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates.
Thin Solid Films,
520,
4270,
2012.
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