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Degree:Doctor
Status:Employed
School/Department:School of Microelectronics

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Paper Publications

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Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN
Date of Publication:2021-10-25 Hits:

Affiliation of Author(s):新一代半导体材料研究院
Journal:CRYSTENGCOMM
First Author:刘磊
Document Code:C3867FFABC184F9BB1BBACD5493F69E6
Volume:23
Issue:41
Page Number:7245
Translation or Not:no
Date of Publication:2021-10-25
Date of Publication:2021-10-25

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