Affiliation of Author(s):新一代半导体材料研究院
Journal:IEEE Electron Device Letters
First Author:徐明升
Document Code:726F533EDF2243FFA6AEB49B98C34B04
Volume:Vo.43
Issue:No.8
Page Number:1271
Number of Words:3
Translation or Not:no
Date of Publication:2022-08-01
Date of Publication:2022-08-01
徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor
Date of Publication:2022-08-01 Hits: