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Degree:Doctor
Status:Employed
School/Department:School of Intergrate Circuit

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Gender:Male

Education Level:Postgraduate (Postdoctoral)

Alma Mater:Shandong University

Patents

Current position: Home / Scientific Research / Patents
一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
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Affilication of Author(s):新一代半导体材料研究院
Type of Patent:发明
Application Number:202210196597.6
Number of Inventors:8
Service Invention or Not:no
Application Date:2022-03-02
Publication Date:2024-05-28
Authorization Date:2024-05-28
Application Date: 2022-03-02
Publication Date: 2024-05-28
Authorization Date: 2024-05-28