Release Time:2024-05-31 |
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徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Patents
一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202210196597.6
Number of Inventors:8
Service Invention or Not:No
Application Date:2022-03-02
Publication Date:2024-05-28
Authorization Date:2024-05-28