Release Time:2024-06-13 |
Hits:
徐明升
+
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Patents
一种GaN HEMTs及降低器件欧姆接触阻值的方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202310430500.8
Number of Inventors:8
Service Invention or Not:No
Application Date:2023-04-18
Publication Date:2024-06-11
Authorization Date:2024-06-11